Datasheet4U.com - LBAS40-04LT1G

LBAS40-04LT1G Datasheet, Leshan Radio Company

LBAS40-04LT1G Datasheet, Leshan Radio Company

Page 1 of LBAS40-04LT1G Page 2 of LBAS40-04LT1G Page 3 of LBAS40-04LT1G

LBAS40-04LT1G diode equivalent

  • schottky barrier diode.
  • Preview is limited to up to three pages.

LBAS40-04LT1G Features and benefits

LBAS40-04LT1G Features and benefits

Low forward current Guard ring protected Low diode capacitance. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION.

LBAS40-04LT1G Application

LBAS40-04LT1G Application

Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION Planar Schottky barrier di.

LBAS40-04LT1G Description

LBAS40-04LT1G Description

Planar Schottky barrier diodes with an integrated guard ring for stress protection. We declare that the material of product compliance with RoHS requirements. Series 3 1 2 SOT- 23 13 Anode Cathode BAS40 single diode. 3 Cathode/Anode ORDERING I.

Image gallery

Page 1 of LBAS40-04LT1G Page 2 of LBAS40-04LT1G Page 3 of LBAS40-04LT1G

TAGS

LBAS40-04LT1G
SCHOTTKY
BARRIER
DIODE
Leshan Radio Company

Manufacturer


Leshan Radio Company

Related datasheet

LBAS40-04LT3G

LBAS40-05LT1G

LBAS40-05LT3G

LBAS40-06LT1G

LBAS40-06LT3G

LBAS40BST5G

LBAS40LT1G

LBAS40LT3G

LBAS116LT1G

LBAS16BST5G

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts